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Bienvenue dans la collection HAL du groupe CS : Convertisseurs Statiques
Nos activités de recherche couvrent les problématiques principales de la conversion d’énergie électrique et reposent sur la combinaison d’approches théoriques et expérimentales autour de la notion de cellule de commutation.
Le groupe s’est spécialisé dans l’étude de nouvelles structures de convertisseurs multicellulaires de moyenne et de forte puissance (du kW au MW) mettant en jeu des agencements originaux des cellules de commutation imbriquées séries, superposées parallèles et la parallélisation globale ou partielle par des dispositifs innovants de couplages magnétiques.
Types de documents publiés
Sujets
Electronique de puissance
Dielectric Barrier Discharge
Electrolyzer
Substations
Thyristor
Insulated gate bipolar transistors
Power integration
Gate-Aging
Railway electrification
Short-Circuit
HEMT GaN
Bridge circuits
Harmonic interactions
Driver circuits
Active Gate Driver
Wide band gap semiconductors
Wide bandgap semiconductors
MOSFET circuits
DBD
Skin effect
Switching losses
MOSFET
Silicon compounds
Switching convertors
Power electronics
Excimer Lamp
Current Mode
Hydrogen
Ultra Violet Generation UV
Optimisation
InterCell Transformer ICT
Silicon carbide
Court-circuit
Short-circuit
Monolithic integration
Traction power supplies
Power conversion
Device simulation
Power MOSFET
Self-switching
Switches
Aerospace
Voltage control
Static converter
Robustness
Multilevel converter
Traction
Capacitors
DC-DC power converters
Electric Discharge Power Supply
Diamond
Gate-Damage
Renewable energy
AC-DC multilevel converter
3D finite elements method
Gate-Driver
Coupled inductors
Rail transportation
Interleaved converters
Intercell transformers
Fuel cells
Current mode converter
Silicon Carbide SiC
CMOS
Power Converters
Cellule de commutation
SiC MOSFET
Failure-Mode
Rail transportation power systems
Decentralized control
Multilevel converters
Fuel cell
Photovoltaic hybrid system
Medium voltage
DC-DC power convertors
Current mode
Power convertors
Fault tolerance
Switching frequency
Efficiency
Elemental semiconductors
2D physical simulation
Buck converter
Reliability
Zero voltage switching
SiC Mosfet
Power converter
MOSFET SiC
Design
Modelling
Inverter
Optimization
Choppers circuits
Busbars
Railways
IGBT
SiC MOSFETs
Power Converter Design
Silicon
GaN
Derniers dépôts
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Louis Alexis Gomez, Luis Gabriel Alves Rodrigues, Guillaume Gateau, Sébastien Sanchez. Characterization of 3.3 kV Discrete SiC MOSFETs in Synchronous Rectification Mode for PV Current Source Inverter Applications. PCIM Europe 2022; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2022, Nuremberg, Germany. pp.DOI:10.30420/565822037, ⟨10.30420/565822037⟩. ⟨hal-04283919⟩
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L. Ghizzo, G. Guibaud, C. de Nardi, F. Jamin, V. Chazal, et al.. Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes. 49th International Symposium for Testing and Failure Analysis ISTFA 2023), Nov 2023, Phoenix, United States. pp.491-499, ⟨10.31399/asm.cp.istfa2023p0491⟩. ⟨hal-04307540⟩